savantic semiconductor product specification silicon pnp power transistors 2SB677 d escription with to-220c package darlington high dc current gain low collector saturation voltage applications high power switching applications power amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -40 v v ebo emitter-base voltage open collector -5 v i c collector current -3 a i b base current -0.2 a p c collector power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SB677 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma, i b =0 -40 v v cesat collector-emitter saturation voltage i c =-2a ,i b =-4ma -1.5 v v besat base-emitter saturation voltage i c =-2a ,i b =-4ma -2.0 v i cbo collector cut-off current v cb =-60v, i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -3.0 ma h fe-1 dc current gain i c =-1a ; v ce =-2v 2000 h fe-2 dc current gain i c =-3a ; v ce =-2v 1000
savantic semiconductor product specification 3 silicon pnp power transistors 2SB677 package outline fig.2 outline dimensions
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